发明名称 LIQUID PHASE EPITAXIAL GROWTH
摘要 PURPOSE:To improve the controlling property of the composition of a growth layer by holding an additive solution, in which a specific dopant is dissolved into at least one of main components in a layer to be grown, in a sub solution storage of a boat for liquid phase epitaxial growth. CONSTITUTION:At least one sub material storage 8 is provided on a sound slider 3 of a boat for liquid phase epitaxial growth comprising a boat base 1 on which an InP substrate 4 is arranged, the first slider 2 having a main material storage 7 holding a main material solution 9 made up of In, InAs, GaAs and the second slider 3 to hold an additive material solution added to by at least one depant material, such as Te, of main components in an epitaxial layer to be grown. This can reduce the evaporation of the dopant material remarkbly thereby controlling the composition of the epitaxial growth layer at a high accuracy.
申请公布号 JPS56148821(A) 申请公布日期 1981.11.18
申请号 JP19800052534 申请日期 1980.04.21
申请人 FUJITSU LTD 发明人 TANAHASHI TOSHIYUKI;AKITA KENZOU
分类号 C30B19/06;H01L21/208;H01L33/30;H01S5/00 主分类号 C30B19/06
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