| 摘要 |
PURPOSE:To perform efficient generation by layering noncrystalline Si including H and noncrystalline Si including H and F on a transparent electrode film. CONSTITUTION:The transparent electrode 8 of an InSn oxide film is deposited on a glass substrate 7. Glow discharge is performed in an SiH4 atmosphere containing B2H6, and P type noncrystalline Si9 containing H is formed. Then the glow discharge is performed in an SiH4+SiF4 atmosphere, and an intrinsic noncrystalline Si layer 10 containing H and F is formed. Thereafter, the glow discharge is performed in the SiH4 atomosphere containing PH3, an N<+> type noncrystalline Si layer 11 is obtained, and Al electrode 12 is attached. In this constitution, the energy- band gap in the second layer 10 becomes smaller than the first layer 9, most of the light reaches the layer 10 without being absorbed by the layer 9, contributes the generation of carriers, and the generation can be performed effectively. |
