| 摘要 |
<p>A method for forming a photoresist pattern is provided to prevent the photoresist pattern from being collapsed during a high speed rotation by absorbing rinse solution before the high speed rotation process. A rinse solution removing apparatus includes a wafer(110), a stage(120), and a rinse solution absorbing unit(150). Photoresist(130), on which exposing and developing processes are performed, is formed on the wafer. The wafer is mounted on the stage. The rinse solution absorbing unit is configured at an upper portion of the wafer and absorbs the rinse solution(140) from the photoresist. The rinse solution absorbing unit is made of a high-absorbing resin. The stage is fixed. The wafer is sucked-in using a vacuum condition and fixed on the stage.</p> |
