Semiconductor device including a channel stop structure and method of manufacturing the same

摘要

It is an object to obtain a semiconductor device comprising a channel stop structure which is excellent in an effect of stabilizing a breakdown voltage and a method of manufacturing the semiconductor device. A silicon oxide film ( 2 ) is formed on an upper surface of an N^--type silicon substrate ( 1 ). An N⁺-type impurity implantation region ( 4 ) is formed in an upper surface ( 3 ) of the N^--type silicon substrate ( 1 ) in a portion exposed from the silicon oxide film ( 2 ). A deeper trench ( 5 ) than the N⁺-type impurity implantation region ( 4 ) is formed in the upper surface ( 3 ) of the N^--type silicon substrate ( 1 ). A silicon oxide film ( 6 ) is formed on an inner wall of the trench ( 5 ). A polysilicon film ( 7 ) is formed to fill in the trench ( 5 ). An aluminum electrode ( 8 ) is formed on the upper surface ( 3 ) of the N^--type silicon substrate ( 1 ). The aluminum electrode ( 8 ) is provided in contact with an upper surface of the polysilicon film ( 7 ) and the upper surface ( 3 ) of the N^--type silicon substrate ( 1 ). The aluminum electrode ( 8 ) is extended over the silicon oxide film ( 2 ) to constitute a field plate.