| 摘要 |
PURPOSE:To enhance the electrostatic breakdown withstanding intensity of the semiconductor device by a method wherein a part of a base region from an emitter region up to a base contact is so formed as the path of a current flowing in the neighborhood of the surface is made to become narrow. CONSTITUTION:The base region 13, the emitter region 11, the base contact 14 and an emitter contact 12 are formed in a collector region 15, and especlally a constricted part is provided in the base region part from the emitter region 11 up to the base contact 14 as to make the current path to narrow. Accordingly the current concentration at the corner parts of the emitter region 11 being the main cause of electrostatic breakdown can be prevented. |
