| 摘要 |
<p>A bake apparatus and a method for forming a photoresist pattern using the same are provided to adjust a threshold dimension of the photoresist pattern by an in-situ process using an imaging unit and a heating plate. A bake apparatus includes a wafer support plate(25), an imaging unit(35), a heating plate(21), a power supply(33), and a controller(37). A wafer(27) is loaded on the wafer support plate. The imaging unit is positioned over the wafer support plate. The heating plate has hot wires(31), and the heating plate is positioned near the wafer support plate. The power supply is electrically connected to the hot wires. The controller is electrically connected to the imaging unit and the power supply so that the controller controls a power supply into the power supply. In order to form a photoresist pattern, provisional photoresist patterns(29) are formed on the wafer. A threshold dimension of the provisional photoresist patterns is measured. The total mean value of the detected threshold values is calculated, and regional mean values of the detected threshold values of the provisional photoresist patterns formed in preset regions of the wafer are calculated. A difference between the total mean value and each regional mean value is calculated, and a temperature compensation for the difference is calculated. The hot wires are heated by an in-situ scheme in response with the temperature compensation.</p> |
