| 摘要 |
PURPOSE:To unnecessitate gold diffusion by means of high density assembly of diode arrays by a method wherein a high density type layer is provided on or in the vicinity of the surface continuous to a substrate in the P type region. CONSTITUTION:Grooves 26, 27, 28, 29 which reach the substrate 10 from the surface ane provided so that the 1st P<+> layer 11 and the 2nd P layer 12 can make respectively an independent island region on the substrate 25 where the 1st P<+> layer 11 by an epitaxial growth and the succeeding 2nd P layer 12 are allowed to grow continuously on an N type silicon monocrystal substrate 10. N<+> regions 13, 14, 15 formed by selective diffusion are provided in the 2nd P layers 16, 17, 18 separated by said grooves and thermal head heating elements R1, R2, R3 are connected respectively to these N<+> regions. Switching transistors are connected to terminals 22, 23, 24 to supply image signals. |
