Gold-tantalum-titanium/tungsten alloy contact for semiconductor devices and having a gold/tantalum intermetallic barrier region intermediate the gold and alloy elements

摘要

In a conductor pattern for integrated circuits, the use of barrier layers of TiW and selected transition metals between gold and a silicon substrate, with the transition metal containing a supplemental barrier region or stratum of an intermetallic formed between it and the gold. Also comprehended is the use of a platinum silicide layer between the TiW layer and silicon for Schottky Barrier Diodes.