MONOLITHIC SEMICONDUCTOR DEVICE COMPRISING TWO COMPLEMENTARY TRANSISTORS AND METHOD OF MAKING SAME

摘要

A method of making a semiconductor device which includes at least one pair of complementary vertical bipolar transistors formed on a plate having a substrate formed of two adjacent portions of opposite conductivity type forming a p-n junction therebetween. The two adjacent portions form, respectively, the collector region of a first of the transistors and the emitter region of a second of the transistors. An electrode is provided on the lower face of the substrate to connect together the two adjacent portions of the substrate. The method of the invention is particularly applicable to making mixed Darlington amplifier structures and push-pull amplifiers composed of such structures.