| 摘要 |
PURPOSE:To simplify the manufacture by reducing etching processes and in addition, to prevent the performance from being fallen by obtaining the photoelectric conversion element without a process to directly etch a photoelectric conversion layer. CONSTITUTION:In2O3 is evaporated on a soda glass plate 1 to form a desired electrode pattern. Al 3 is layer-built to be applied with a resist mask 5, and the Al is etched to form a groove 6. Then, a layer 8 large and a layer 9 small in a band width are layer-built by evaporation in the combination of CdS-CdTe. As2Se3 10 is formed on the layers 8, 9 to further improve a photoelectric characteristic. Then, the Al 3 is etched to make an Al electrodes 11 be attached. With this construction, the manufacturing process is simplified because the laminated layers are not individually etched, and since the photoelectric conversion layer is layer-built by an evaporating method, a long size or a large area can easily be made. In addition, since a chemical etching process is not directly applied to the photoelectric conversion layers. an etching liquid is contaminated and the excellent characteristic can be obtained. |
