| 摘要 |
PURPOSE:To carry out an effective instantaneous annealing by causing the surface of a semiconductor to contact oxygen and hydrogen gas flame. CONSTITUTION:A polysilicon film 2 is formed on the main surface of a silicon substrate. If an oxygen and hydrogen flame 4 coming out of the nozzle of an upper burner 3 is scanned held toward the said polysilicon film 2 for thermal processing, a monocrystal can be formed on the surface of the polysilicon 2. In this manner, it is possible to comparatively easily and selectively apply a required amount of annealing process to a semiconductor material through the proper control of gas component composition, flow and scanning. |
