发明名称 |
Silicon wafer, method for producing silicon wafer and method for growing silicon single crystal |
摘要 |
A silicon single crystal is grown by the CZ method. A silicon melt from which the crystal is grown is added with dopant such that the crystal has a resistivity of 0.025 to 0.08 Omegacm. As well as the dopant, carbon is added to the silicon melt. The crystal is pulled in a hydrogen-bearing inert atmosphere.
|
申请公布号 |
US7637997(B2) |
申请公布日期 |
2009.12.29 |
申请号 |
US20060439486 |
申请日期 |
2006.05.22 |
申请人 |
SUMCO CORPORATION |
发明人 |
ONO TOSHIAKI;SUGIMURA WATARU;HOURAI MASATAKA |
分类号 |
C30B15/20 |
主分类号 |
C30B15/20 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|