发明名称 Silicon wafer, method for producing silicon wafer and method for growing silicon single crystal
摘要 A silicon single crystal is grown by the CZ method. A silicon melt from which the crystal is grown is added with dopant such that the crystal has a resistivity of 0.025 to 0.08 Omegacm. As well as the dopant, carbon is added to the silicon melt. The crystal is pulled in a hydrogen-bearing inert atmosphere.
申请公布号 US7637997(B2) 申请公布日期 2009.12.29
申请号 US20060439486 申请日期 2006.05.22
申请人 SUMCO CORPORATION 发明人 ONO TOSHIAKI;SUGIMURA WATARU;HOURAI MASATAKA
分类号 C30B15/20 主分类号 C30B15/20
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