| 摘要 |
PURPOSE:To obtain a semiconductor film without a heater or a control device by adhering semiconductor particles on a substrate by means of electrostatic force and dissolving the particles with the help of light or electronic beam. CONSTITUTION:An electricity is charged on the surface of an SiO2 substrate 1 having a matrix-shaped unevenness as a positive electric charge, using a corona electric discharging head C. Next, silicon powder is blown out of a nozzle N and silicon particles electrically charged as a negative electric charge are adhered on the substrate 1 at room temperature by means of electrostatic force. Following this process, silicon particles 2 are dissolved by scanning with high energy generated by a leaser beam, etc. to form a single crystal silicon film 4. To complete a substrate for a film semiconductor device, an impurity is introduced into a layer 4. In this fashion, it is possible to process a large quantity of semiconductor films and form the said film on a substrate of large size. |
