| 摘要 |
PURPOSE:To easily and in good revivability obtain a wiring-pattern having a moderate inclination on a side surface of the end edge thereof by a method wherein ions are injected on an Al layer surface. CONSTITUTION:The Al layer 13 is formed on an insulating layer 2 on an Si substrate and injected with Ar ions. A resist mask 10 having the wiring pattern is formed to be etched and to form a wiring 14. At this time, an etching speed is high on the surface side due to the damage give by the ion-injection, so that the side etching is remarkably developed to enable the inclined plane 14a to be obtained on the edge side face. The resist mask 10 is removed to finish. A tilt angle can be formed arbitrarily accurately and in good revivability by selecting an ion-injection energy and a dosage. |
