发明名称 DEFICIENCY ANALYSIS OF SEMICONDUCTOR ELEMENT
摘要 PURPOSE:To detect fine deficiency quickly and accurately by processing a fluorescent image generated through excitation with ultraviolet rays irradiation to a resist pattern after it is taken with a TV camera. CONSTITUTION:An automatic feeding mechanism 2 is loaded with a monitoring sample after a resists wire 8 is arranged in the same direction as a horizontal scanning of TV. Ultraviolet rays are radiated to irradiate a resist wiring pattern through a microscope 3 and the reflected light and the excited fluorescence are partially magnified. Only a fluorescent image undergoes a photoelectric conversion and the video signal is processed to be displayed on a CRT6. The resist wire 8 having a defect 10 differs from an SiO2 film in the video image depending on whether there is fluorescence or not. Then, after a binary conversion, the video signal is set at the level ''1'' from a defect up to the end of scanning by implantation and then, the level ''1'' is canceled from a SiO2 portion by image reduction, leaving a level SIGMAS in portions based on the defect 10. The existence of the defect is defected depending SIGMAS. This method enables an accurate and quick study on how a defect develops.
申请公布号 JPS56134736(A) 申请公布日期 1981.10.21
申请号 JP19800039400 申请日期 1980.03.26
申请人 MITSUBISHI ELECTRIC CORP 发明人 NISHIOKA SUNAO
分类号 G01N21/88;G01N21/956;H01L21/027;H01L21/66 主分类号 G01N21/88
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