| 摘要 |
PURPOSE:To obtain the device in high integration degree and high reliability by a method wherein a wiring film is formed on a substrate made of the same material as that of a semiconductor chip through an insulating film and fixedly attached on a packaged substrate, and a facedown junction of the chip is constructed. CONSTITUTION:An SiO2 film 11 is formed and gold films 12a, 12b are formed on the Si substrate 10. The facedown junctions of projecting electrodes 2a1, 2b1, 2a2, 2b2 of the Si chips 1a, 1b are constructed. Then, the Si substrate 10 is fixedly attached on the packaged substrate 14, and the gold films 12a, 12b on the substrate 10 are connected 16a, 16b at external connecting leads 17a, 17b and terminals 15a, 15b. With this construction, since a pattern can be formed finely on the flat Si substrate 10, the chips can be made integral in high density and also, a thermal strain is not produced due to the same quality as the chip, and the device can be attained in the high reliability. |
