| 摘要 |
PURPOSE:To improve the optoelectro energy conversion efficiency of a photoelectric transducer by repeatedly piling P type and N type semiconductors and photoelectric semiconductor materials in a specific order. CONSTITUTION:A photoelectric semiconductor layer 7 is bonded between the first P type and N type semiconductor layers 1 and 4, and a photoelectric semiconductor layer 8 is bonded between the first N tupe semiconductor layer 4 and the second P type semiconductor layer 2. Then, photoelectric semiconductor layers 9, 10 and 11 are successively bonded between the second P type semiconductor layer 2 and the second N type semiconductor layer 5, the second N type semiconductor layer 5 and the third P type semiconductor layer 3, and the third P type semiconductor layer 3 and the third N type semiconductor layer 6, respectively, to form multilayer films. In addition, layers are moreover formed by repeating such order. |
