SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME, POWER SUPPLY DEVICE AND HIGH-FREQUENCY AMPLIFIER

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor device and a manufacturing method of the same, a power supply device and a high-frequency amplifier, which can make a p-type back barrier layer be entirely and successfully activated when the p-type back barrier layer formed by a p-type nitride semiconductor doped with Mg or Zn in a semiconductor device having a nitride semiconductor lamination structure including an electron transit layer and an electron supply layer.SOLUTION: A semiconductor device comprises: a p-type back barrier layer 3 which is provided above a substrate 1 and formed by a p-type nitride semiconductor doped with Mg or Zn; a nitride semiconductor lamination structure 6 which is provided on the p-type back barrier layer 3 and includes an electron transit layer 4 and an electron supply layer 5; a source electrode 7, a drain electrode 8 and a gate electrode 9 which are provided on the nitride semiconductor lamination structure; and a groove 10 which reaches the p-type back barrier layer 3.SELECTED DRAWING: Figure 1