发明名称 Radiant energy activated semiconductor switch
摘要 Various circuits and combinations of radiant energy responsive transducer means such as photovoltaic diodes connected to the gate of a depletion mode FET whose source and drain are connected to the gate and cathode of a thyristor, are disclosed to provide a semiconductor switch which is triggered into conduction solely by a small amount of radiant energy, without the need for a second triggering energy source, and which also affords immunity to unwanted dv/dt and temperature induced turn-on. Various modes of operation are disclosed, including the thyristor self-triggering into conduction, and/or being of the light-activated type itself and being directly triggered by impinging light, and/or being triggered by the light-responsive diode bias, and/or being triggered by a small bias supplied from a second set of photovoltaic diodes connected to the thyristor gate. Other combinations are disclosed providing zero-cross firing.
申请公布号 US4295058(A) 申请公布日期 1981.10.13
申请号 US19790046568 申请日期 1979.06.07
申请人 EATON CORPORATION 发明人 LADE, ROBERT W.;SPELLMAN, GORDON B.;JASKOLSKI, STANLEY V.;SCHUTTEN, HERMAN P.;JAESCHKE, JAMES R.
分类号 H03K17/13;H03K17/79;H03K17/94;(IPC1-7):H03K17/72;H03K17/68 主分类号 H03K17/13
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