发明名称 |
Radiant energy activated semiconductor switch |
摘要 |
Various circuits and combinations of radiant energy responsive transducer means such as photovoltaic diodes connected to the gate of a depletion mode FET whose source and drain are connected to the gate and cathode of a thyristor, are disclosed to provide a semiconductor switch which is triggered into conduction solely by a small amount of radiant energy, without the need for a second triggering energy source, and which also affords immunity to unwanted dv/dt and temperature induced turn-on. Various modes of operation are disclosed, including the thyristor self-triggering into conduction, and/or being of the light-activated type itself and being directly triggered by impinging light, and/or being triggered by the light-responsive diode bias, and/or being triggered by a small bias supplied from a second set of photovoltaic diodes connected to the thyristor gate. Other combinations are disclosed providing zero-cross firing.
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申请公布号 |
US4295058(A) |
申请公布日期 |
1981.10.13 |
申请号 |
US19790046568 |
申请日期 |
1979.06.07 |
申请人 |
EATON CORPORATION |
发明人 |
LADE, ROBERT W.;SPELLMAN, GORDON B.;JASKOLSKI, STANLEY V.;SCHUTTEN, HERMAN P.;JAESCHKE, JAMES R. |
分类号 |
H03K17/13;H03K17/79;H03K17/94;(IPC1-7):H03K17/72;H03K17/68 |
主分类号 |
H03K17/13 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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