发明名称 Growth of single-crystal magnetoplumbite
摘要 Single crystal magnetoplumbite is grown at temperatures under 1000 DEG C. from a fluxed melt having a selected concentration ratio of boron oxide to lead oxide and a selected concentration of iron oxide sufficient to cause magnetoplumbite to crystallize yet not so much iron oxide as will cause the melt's crystallization temperature to exceed 1000 DEG C.
申请公布号 US4293372(A) 申请公布日期 1981.10.06
申请号 US19800168927 申请日期 1980.07.15
申请人 ROCKWELL INTERNATIONAL CORPORATION 发明人 GLASS, HOWARD L.
分类号 C01G49/00;C30B9/00;C30B9/04;C30B19/02;C30B29/22;H01F1/34;H01F10/20;(IPC1-7):C30B19/04 主分类号 C01G49/00
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