发明名称 |
Growth of single-crystal magnetoplumbite |
摘要 |
Single crystal magnetoplumbite is grown at temperatures under 1000 DEG C. from a fluxed melt having a selected concentration ratio of boron oxide to lead oxide and a selected concentration of iron oxide sufficient to cause magnetoplumbite to crystallize yet not so much iron oxide as will cause the melt's crystallization temperature to exceed 1000 DEG C.
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申请公布号 |
US4293372(A) |
申请公布日期 |
1981.10.06 |
申请号 |
US19800168927 |
申请日期 |
1980.07.15 |
申请人 |
ROCKWELL INTERNATIONAL CORPORATION |
发明人 |
GLASS, HOWARD L. |
分类号 |
C01G49/00;C30B9/00;C30B9/04;C30B19/02;C30B29/22;H01F1/34;H01F10/20;(IPC1-7):C30B19/04 |
主分类号 |
C01G49/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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