| 摘要 |
PURPOSE:To enable the high integration of a semiconductor memory device by forming impurity regions of the same conductivity type adjacently at the upper and the lower sides thereof via parts of impurity regions of reverse conductivity type thereto. CONSTITUTION:P type semiconductor regions 12-1-12-3 are formed on an N type semiconductor layer 11, and N<+> type semiconductor regions 13-1a, 13-1b,...31-1d are exposed on the surfaces of the regions 12-1-12-3. Further, N<+> type semiconductor regions 14a-1a, 14-1b are buried in the regions 12-1-12-3. Thus, the regions 13-1a and 14-1a, 31-2a and 14-2a,... are elevationally corresponded to the emitter and the collector with a P type region interposed therebetween as base layers, and operate as a switching element having transistor functions. The wires for connecting the regions 13-1a-13-3a or the regions 13-1b-13-3b become bit lines, the wires for connecting the regions 12-1-12-3 become word lines, and the regions 14-1a, 14- 1b,... form memory cells as the storage unit for storing the charges. |
