| 摘要 |
PURPOSE:To prevent malfunctioning of a highly integrated IC by shielding or damping alpha rays only with a polyimide resin applied on a ceramic substrate. CONSTITUTION:An electrode withdrawing port 2 of a semiconductor element 1 formed on a ceramic substrate 3 is connected direct to a metalized electrode 4 on the ceramic substrate 3 as an Au-based or Pb-based compound. A polyimide resin 8 is applied in a closed region 7 connecting an adjacent electrode 4 beforehand. If so, the release of alpha-rays from the ceramic substrate 3 can be shielded or damped with the resin thereby preventing malfunctioning of the element 1. |
