发明名称 HIGH SPEED ONE-ADDER CIRCUIT
摘要 The circuit for adding binary form of one with high speed comprises an exclusive OR gate (EX3) for providing one added value of data (PDi+1) according to the states of a value of the existing data (PDi) and a value of the front data (Ci-1), a MOS FET (MN1) for controlling the state of the front carrier value with the clock pulse, and a MOS FET(NM2) for providing an existing carrier value with reception of the value of the existing data.
申请公布号 KR880002658(B1) 申请公布日期 1988.12.17
申请号 KR19850007153 申请日期 1985.09.27
申请人 SAMSUNG SEMI-CONDUCTOR COMMUNICATION CO., LTD. 发明人 JIN TAE-HUN;CHOI BYONG-O;KIM JONG-WON;LEE SONG-HUI
分类号 G06F7/50;(IPC1-7):G06F7/50 主分类号 G06F7/50
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