发明名称 |
HIGH SPEED ONE-ADDER CIRCUIT |
摘要 |
The circuit for adding binary form of one with high speed comprises an exclusive OR gate (EX3) for providing one added value of data (PDi+1) according to the states of a value of the existing data (PDi) and a value of the front data (Ci-1), a MOS FET (MN1) for controlling the state of the front carrier value with the clock pulse, and a MOS FET(NM2) for providing an existing carrier value with reception of the value of the existing data.
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申请公布号 |
KR880002658(B1) |
申请公布日期 |
1988.12.17 |
申请号 |
KR19850007153 |
申请日期 |
1985.09.27 |
申请人 |
SAMSUNG SEMI-CONDUCTOR COMMUNICATION CO., LTD. |
发明人 |
JIN TAE-HUN;CHOI BYONG-O;KIM JONG-WON;LEE SONG-HUI |
分类号 |
G06F7/50;(IPC1-7):G06F7/50 |
主分类号 |
G06F7/50 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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