| 摘要 |
PURPOSE:To uniformly coat a diffusion source on a semiconductor wafer by a diffusion source for forming a semiconductor junction in which finely pulverized impurity is dispersed in a solution in which organic high molecular material is dissolved with a silicone surfactant. CONSTITUTION:Diffusion sources (reference numeral 2 represents P type source and 3 represents N type source) in which finely pulverized impurity is diffused with silicone surfactant (preferably a surfactant having less than 22dyn/cm of surface tension at 34 deg.C when it is prepared by graft polymerizing propylene oxide with saccharose and dissolved in a concentration of 1wt% in polyether polyol having 9,000cps of viscosity at 25 deg.C) in solution in which organic high molecular material such as ethyl cellulose or the like is dissolved in an organic solvent such as n-butyl carbitol acetate or the like, are coated on both side surfaces of a semiconductor substrate 1, heat treated, and P type diffused layer 4 and N type diffused layer 5 are formed. Thus, the impurity can be uniformly diffused with easy controllability, and the yield in the product can be improved. |
