| 摘要 |
PURPOSE:To form a wire without an undercut in high accuracy for the electrode of a semiconductor device by forming a film having high etching ratio for both the reactive ion etching resist and the electrode wiring material between the resist and the electrode wiring layer. CONSTITUTION:An insulating film 12 formed with a contact hole 12 is formed on a semiconductor substrate 11. After an electrode wiring material layer 14 of aluminum or the like is accumulated on the film 12, a film 15 of SiO2, Si3N4 or the like having high etching selection ratio with respect to the layer 14 and the resist is formed thereon, and a resist pattern 16 is formed thereon. With the pattern 16 as a mask the film 15 is etched with gaseous ions incident perpendicularly thereto, and a pattern 15' having no undercut is formed thereon. Thereafter, the reaction gas is replaced to etch the layer 14, and an aluminum electrode wire 17 is formed thereon. With such a construction an infinitesimal electrode wiring can be formed precisely without an undercut. |
