发明名称 PROCESS FOR DOPING HIGH PURITY SILICON IN AN ARC HEATER
摘要 <p>PROCESS FOR DOPING HIGH PURITY SILICON IN AN ARC HEATER A method for doping solar grade silicon characterized by the steps of feeding into an arc heated gas stream a quantity of a metal reductant such as an alkali metal or an alkaline-earth metal and also feeding into the stream a quantity of a silicon halide and a corresponding halide of a doping agent such as arsenic to react with the metal reductant to produce reaction products including a salt of a metal reductant and a mixture of liquid silicon and doping agent, and separating the mixture from the salt of the metal reductant.</p>
申请公布号 CA1109568(A) 申请公布日期 1981.09.22
申请号 CA19780298113 申请日期 1978.03.03
申请人 WESTINGHOUSE ELECTRIC CORPORATION 发明人 FEY, MAURICE G.
分类号 C30B29/06;C01B33/033;C30B25/02;H01L21/205;H01L21/26;H01L21/265;H01L29/167;H01L31/04;H01L31/18;H05B7/18;(IPC1-7):01L21/64 主分类号 C30B29/06
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