| 摘要 |
A broadband, low loss, microwave integrated circuit power combiner for field effect transistors and other solid state amplifiers has a single metallized MIC substrate contained within a waveguide structure. An array of fin-line transitions from plural microstrip lines to a standard output waveguide can be tapered and placed directly in the waveguide taper region. Undesired higher order modes are absorbed by resistance metallization strips at the tips of the fin-lines or by resistor networks which bridge the microstrip lines.
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