| 摘要 |
The present invention relates to a process for the preparation of polycrystalline silicon in the form of a thin layer. In a special embodiment of the invention, a silicon compound in the vapour state is reduced with zinc in the melt state in the presence of at least one other metal, similarly in the melt state, chosen from a group comprising tin, lead, gold, silver, antimony and bismuth. This reduction is carried out at a reduction temperature of 700-800 degrees C under a total pressure of 1 atm. The resulting silicon is suitable for photoelectric conversion purposes. |
