Circuit arrangement for reading out and regenerating items of information stored in one-transistor storage elements

摘要

A circuit arrangement is disclosed for reading out and regenerating items of information stored in one-transistor storage elements. For read-out, storage elements addressed by the activation of a word line transfer an existing information charge into assigned bit lines, and wherein the bit lines influence inputs of assigned read-out/regenerating amplifiers. The storage density of semiconductor stores is increased by providing a circuit arrangement in which the disproportion in terms of area between technologically realizable storage matrices and the required amplifiers which is a by-product of the miniaturization of stores of the above mentioned type does not occur. A group of m bit lines are in each case combined to form groups and are consecutively connected via a multiplexer to a common read-out/regenerating amplifier.