| 摘要 |
PURPOSE:To form a semiconductor device with a stepped structure by holding the mask in parallel with a reference plane, and exposing the side wall of a concave part cut into the inside from the surface, in the direction which is inclined from a normal line. CONSTITUTION:The mask of Cr 9 with the width d is formed on a glass plate 8. SiO2 11 and a positive type resist 12 are layered on an Si substrate 10 having cut out parts. The glass plate 8 and the substrate 10 are in parallel and separated by a distance l. The distance between the mask edge and the wall of the cut part is a, and the light is illuminated from the direction at an angle theta. After the development treatment and etching of the SiO2 film 11, a hole with the width W2 is obtained at the location separated by the distance W1 from the wall surface. At this time, W1=a tan theta-l and W2=d tan theta. If the four variables are properly selected, W1 and W2 can be arbitrarily formed. |
