| 摘要 |
PURPOSE:To suppress the generation of the defects of pattern in the final process of lift-off type patterning, by performing the patterning without reattaching the small pieces of a thin metal film which are floating in the solvent for exfoliation. CONSTITUTION:Photoresist films 21'' and 22'', for which different etching liquids are used, are layered on a glass plate 3''. Exposure is performed by using a specified pattern and development is performed. After the product is washed with water, it is sufficiently dried in N2, and the surface is covered by vapor-deposited Cr film 41'' and 4''. Then the resist film 21'' is selectively removed by the etching liquid. In this constitution, since the reattachment of the small pieces of Cr, which are exfoliated and removed in the etching stage of the lower resist mask 21'', is prevented, no defect of the pattern is produced. |
