| 摘要 |
PURPOSE:To prevent the deterioration or surface breakdown of the end face of the output of the semiconductor laser by forming the output end face for irradiating the light of the laser of high resistance semiconductor layer. CONSTITUTION:The first layer 2 of N type Ga1-xAlxAs, the second layer 3 of N or P type GaAs, the third layer 4 of P type Ga1-xAlxAs, and fourth layer 5 of P<+> type GaAs are sequentially formed on an N type GaAs substrate 1, and striped active region is formed. The striped region is formed, for example, by retaining the striped region, irradiating proton thereto to form a high resistance region, and the output end faces 6, 6' are not only formed in parallel with the stripe but have high resistance layer. In order to form the high resistance layer, there are methods of injecting oxygen or chromium atom by an ion injection in addition to the irradiation of the proton, but according to the above method very shallow high resistance layer can be formed, resulting in low loss. |
