| 摘要 |
PURPOSE:To improve the di/dt amount of the reverse conductivity type thyristor without loss of the withstand voltage characteristics thereof at the time of high temperature by increasing the current amplification factor at the gate confronting part of an initial turn-on region. CONSTITUTION:A pB layer 2 and an nE layer 3 are formed on a semiconductor substrate 1, and an nE layer 4 is further diffused therein. A pE layer 5 is so selectively diffused as not to form a short emitter region 8 at the portion 5a confronting the gate region 7 of the layer 5. Thus, the lateral resistance R2 to the short emitter region 8 of the layer 3 from the initial turn-on region is increased, and an electron flow (as designated by a broken line with an arrow) from the layer 2 is effectively introduced into a pE layer 5a. Accordingly, the current amplification factor of the pnp transistor of this part is increased and the expanding speed of the initial turn-on region is accelerated. Consequently, the di/dt amount is improved without loss of the withstand voltage characteristics thereof. |
