| 摘要 |
PURPOSE:To give self corrective function to software error, by splitting one bit storage information into a plurality of memory cells for storage. CONSTITUTION:At write-in of memory cells 7a1, 10a1, a bit line 5a is at either ''0'' or ''1'', and this potential is fed to the drain of MOSFET8a of the cells 7a1 and MOSFET8b of the cell 10a1 via a logic circuit 11a. Further, when the word line 4a is made to high potential, FETs 8a and 8b are conductive and either ''0'' or ''1'' of information is stored to MOS capacitors 9a, 9b with split. Moreover, if there is a software error in the cell 7a1, the information to the cells 7a1, 10a1 is inverted and the logic circuit 10a takes the logical sum of both the information for error correction. |
