| 摘要 |
PURPOSE:To minimize defects and obtain a single crystal island region, by coating a single crystal Si substrate with polycrystalline Si or amorphous Si film by means of a conductive film, farming its single crystal by laser annealing and oxidizing it selectively. CONSTITUTION:An SiO2 film 11 is formed on a P type Si single crystal substrate 10 with a selectively made opening, and a poly or an amorphous Si 12 is formed. Then it is converted into a single crystal Si 13 after laser beam application and heating. The layer 13 and the substrate 10 are of the same dimensional direction. Thereafter, an Si3N4 mask 15A, 15B are formed and selectively oxidized to have an isolation layer 14 and the island regions 13A, 13B are formed. In the island region, a bipolar transistor and an insulated gate FET are formed respectively as an instance. With such an arrangement, the single crystal island region can easily be obtained with relatively fewer defects and smaller parasitic volume, mutually insulated and separated. Furthermore, double-layered IC are realized on both the substrate and the single crystal, resulting in the greater integration. |
