| 摘要 |
PURPOSE:To arrange so that a lamination density may be high, by forming a deep counter-electroconductive-type region in a part where high voltage is applied inside a seamed part formed by a semiconductor substrate and a counter-electroconductive- type region. CONSTITUTION:A silicon oxidization film 33 and a gate oxidization film 32 are formed on a P type semiconductor substrate 30, and a source equivalent region 34 and a drain equivament region 35 are formed by injecting or diffusing impurities. Next, the curvature of a seam is increased by providing an aluminum film 37 and increasing the depth rate of a seam, so that a part excepting a diffusion region where compression is increased is coated. Following this procedure, an ion beam is irradiated to form an injection layer 38 and an aluminum film 33 is removed to perform diffusion through thermal treatment. A region 39 to which an ion beam is irradiated has a deeper diffusion layer than a region to which an ion beam is not irradiated. Further the formed curvature of the former is larger than that of the latter. |
