| 摘要 |
PURPOSE:To minimize the occupancy area of a differential-type transistor circuit by providing plural base layers and plural emitter layers in a collector layer of one island region where an element is separated. CONSTITUTION:An n type expitaxial layer 12 and a p type element separation layer 13 are formed on a p type silicon substrate 11. An n type island region 12 is provided as a collector layer and two independent base regions 141, 142 are provided in the said region 12. At the same time, emitter regions 151, 152 are provided in each base. In addition, an n type embedded layers 161, 162 are provided opposed to each base region, and collector terminal leading layers 171, 172 are led. This composite transistor is used as a differential transistor to form an ECL circuit. Then the element separation region of each transistor is no longer necessary, thus reducing the occupancy area of the ECL gate. |
