FORMING METHOD OF ELECTRODE ON SEMICONDUCTOR DEVICE

摘要

PURPOSE:To manufacture an ohmic electrode of satisfactory performance at high yield by forming an electrode layer on the surface of a semiconductor substrate with the help of a magnetron-type spattering device having a nickel-copper alloy target of specific composition. CONSTITUTION:A target 2 connected to a magnet 4 is arranged opposed to a semiconductor substrate 3 and a DC electric field is applied between the both parts. Then an Ar ion is irradiated onto the target, so that particles of the target are caused to attach on the semiconductor substrate 3. In a spattering device of magnetron type having the above function, the target of nickel-copper containing 24-39wt% of copper is used. Under this constitution, microdust does not deposit on the surface of the target and an ohmic electrode of satisfactory performance can be manufactured at high yield.