| 摘要 |
PURPOSE:To perform uniform annealing by a process wherein a wafer is made to pass at a fixed speed the slit-shaped irradiation region wherein the whole photographic degree curves through a lamp are formed in parallel. CONSTITUTION:An arc lamp 1 with a long shaft is put in a focus of an oval mirror 2 and a slit plate 3 is arranged in the middle of a conveyer 4. By said constitution the distribution of illuminance of the symmetrical curve 1 (y) in the Y-Y direction having the X-X direction as the vertex, in the X-X direction 1 (y) becomes the definite illuminance distribution to form a slit-shaped irradiation region wherein the equalirradiation curve 1 (y) are all formed in parallel. When the wafer 6 passes the irradiation region 5 at a fixed speed the whole wafer surface is almost idially uniformly annealed. Further by making the lamp output and the conveyer speed variable, the temperature rising speed, temperature and annealing time of the wafer can be controlled.
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