发明名称 DIVIDING METHOD FOR SEMICONDUCTOR WAFER
摘要 <p>PURPOSE:To separate a semiconductor element from a sheet without using a special solvent after etching by weakening tackiness of an adhesive applied on the sheet when the semicondutor element is subjected to etching. CONSTITUTION:After a wafer 4 having a P-N junction 1 and electrodes 2, 3 is fixed on a sheet 6 with an adhesive 5 applied on one face, a scribed groove 7 is provided for easy cut and separation. Next, it is pressurized by a proper method to separate into each element 41. Then, the sheet 6 is pulled to separate the elements 41 each other. From putting them in an etching reagent as separated each other, chips and burrs 8 are dissolved and removed and a tackiness of the adhesive is weakened, therefore they can be easily taken off with a collet. Since there needs no special solvent after etching according to the above constitution, the operation is facilitated to adapt for automation.</p>
申请公布号 JPS56107563(A) 申请公布日期 1981.08.26
申请号 JP19800010791 申请日期 1980.01.30
申请人 SANYO ELECTRIC CO;TOKYO SANYO ELECTRIC CO 发明人 YONEZAWA YOSHITAKA
分类号 H01L21/301;H01L21/302;H01L21/68 主分类号 H01L21/301
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