| 摘要 |
PURPOSE:To obtain a negative resist pattern with high working accuracy by irradiating an electron beam sensitive inorg. resist consisting of silicon and silicon oxide with electron beams followed by development by a dry etching method. CONSTITUTION:Chromium thin film layer 2 and electron beam sensitive inorg. resist thin film 3 of 0.05-1mum thickness based on a mixture of silicon and silicon oxide are formed on transparent substrate 1 of glass or the like. Thin film 3 is patternwise irradiated with electron beams 4 and developed by a dry etching method using a gas contg. one or more kinds of carbon halides or the halides and oxygen. Thus, the whole process can be carried out in the absence of dust, and a semiconductor, IC, LSI, etc. of high reliability are obtd. |
