发明名称 |
Sense amplifier with dual parallel driver transistors in MOS random access memory |
摘要 |
A random access memory device of the MOS integrated circuit type employs an array of rows and columns of one-transistor storage cells with a bistable sense amplifier circuit at the center of each column. Instead of a single pair of cross-coupled driver transistors forming the bistable circuit, dual parallel pairs are used. One pair used in the initial sensing has a long channel length so that the pair may be more readily matched, while the other pair used later in the cycle for driving the zero-going side of the column line to ground has a shorter channel to enhance speed.
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申请公布号 |
US4286178(A) |
申请公布日期 |
1981.08.25 |
申请号 |
US19780914646 |
申请日期 |
1978.06.12 |
申请人 |
TEXAS INSTRUMENTS INCORPORATED |
发明人 |
RAO, G. R. MOHAN;WHITE, JR., LIONEL S. |
分类号 |
G11C11/4091;H03K3/356;(IPC1-7):H03K5/24;H03K3/35;G11C7/06 |
主分类号 |
G11C11/4091 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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