INTEGRATED CIRCUIT DEVICE INCLUDING BOTH N-CHANNEL AND P-CHANNEL INSULATED GATE FIELD EFFECT TRANSISTORS,申请号KR1019760001142-传众专利搜索

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发明名称	INTEGRATED CIRCUIT DEVICE INCLUDING BOTH N-CHANNEL AND P-CHANNEL INSULATED GATE FIELD EFFECT TRANSISTORS
摘要
申请公布号	KR1019810000964(B1)	申请公布日期	1981.08.24
申请号	KR1019760001142	申请日期	1976.05.10
申请人		发明人
分类号		主分类号
代理机构		代理人
主权项
地址

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