发明名称 |
METHOD OF FORMING OXIDE FILM ON AMORPHOUS SILICON |
摘要 |
The present invention relates to an amorphous silicon MIS device having an insulating oxide formed by the chemical oxidation of the silicon surface. A process comprising etching the silicon surface followed by a treatment of the etched surface in a sulfur based oxidant forms a controlled thickness oxide layer, useful in modifying the junction forming characteristics of the semiconductor and additionally stabilizing the semiconductor properties of the photoconductive amorphous silicon. |
申请公布号 |
JPS56103476(A) |
申请公布日期 |
1981.08.18 |
申请号 |
JP19800169724 |
申请日期 |
1980.12.03 |
申请人 |
EXXON RESEARCH ENGINEERING CO |
发明人 |
JIYOZEFU ERU SANSUREGURETSUTO |
分类号 |
C01B33/02;C01B33/12;H01L21/306;H01L21/316;H01L29/16;H01L29/47;H01L31/0392;H01L31/04;H01L31/062;H01L31/20 |
主分类号 |
C01B33/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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