| 摘要 |
PURPOSE:To increase in large a reverse-recovery rate by a method wherein when electrodes are attached to semiconductor layers respectively on which P-N junctions are formed to be made the semiconductor device, one of the semiconductor layers is made a 2-layer structure, on which interface a conductive-type region is formed which is mosaic and different in high impurity concentration. CONSTITUTION:When the P-N junctions 8 are formed by a P type semiconductor region 1 and an N<+> type semiconductor region 6 to construct the semiconductor device of a diode, a P<+> type region 2 is provided situated on the opposite side to the junctions 8 in the region 1 on one side. Further, a large number of the N<+> type regions scattered in latticelike or mosaic are formed by diffusion in the region 1 on the border of the regions 1 and 2. Thereafter, a metal layer 3 for the electrode to be an anode is attached on the outside of the region 2 and a metal layer 7 for the electrode to be a cathode on the outside of the region 6, respectively. Thus, a small number of carriers are prevented from being stored in the region 1 and the reverse- recovery rate is increased. |
