| 摘要 |
PURPOSE:To form a microminiature electrode pattern by irradiating an ion beam to the part of an electrode material layer formed through a resist on a substrate as adhered to the end surface of the thickness of the resist layer or etching the resist layer with other ion beam. CONSTITUTION:A photoresist layer 2 of predetermined pattern is formed on the semiconductor substrate 1, the electrode material layer 4 of aluminum or the like is formed on the entire surface, then the ion beam 5 of Ar or the like is obliquely rotatably irradiated thereto so as to remove the electrode material layer 4' adhered to the end surface of the resist layer, thereafter oxygen ion beam is irradiated thereto, and the electrode material layer on the resist layer 2 and the resist layer 2 are removed. Since the microminiature electrode pattern can be thus lifted off by dry etching in this manner, it can simplify the setps and labor-save the process. |
