| 摘要 |
PURPOSE:To obtain a high output with a low current by a method wherein a double film of SiO2 film and Si film is provided on one end surface of two resonator end surfaces composing the laser device so as to raise an end-surface reflection ratio, while SiO2 film alone is connected to the other end surface so as to lower the ratio. CONSTITUTION:On an N type GaAs substrate 5, an N type Ga0.7Al0.3As layer 6, a Ga0.95Al0.05As active layer 7, a P type Ga0.7Al0.3As layer 8 and a P type GaAS layer 9 are laminated and made to grow, while to the layer 9 is connected a positive electrode 10 having a stripe 15, and to the back surface of the substrate 5 is connected a negative electrode 11. Next, on one cloven resonator end surface of the main body of the laser thus constituted, a 1/4 wavelength SiO2 film 12 and a 1/4 wavelegnth Si film 13 are laminated and connected thereto, while to the other resonator end surface only the SiO2 film 14 is connected. The reflection ratio of one resonator end surface is made high, while that of the other resonator end surface low in this way, and therefore, the current required for obtaining a high output is made less than that required for an ordinary laser device. |
