发明名称 INJECTING METHOD FOR ION
摘要 PURPOSE:To perform plural times of injection of ions by using, as an injection mask, a film having regions different in the projecting distance of ions in a selective manner and further by employing a sheet of the mask repeatedly. CONSTITUTION:The averaged permeation depth Rp of ions into an insulation film and a conductor film increases with energy of injection. Therefore, a mask having selectively a region (permeation) wherein the thickness of a single-crystalline or polycrystalline Si film is several hundreds Angstrom and a region (shielding) wherein the thickness is several mum or less is placed on a substrate and ions are injected with energy not enabling the permeation through the shielded region, whereby the mask and the substrate are separated from each other. That is, when the ions are injected with the energy within the range where Rp is several thousands Angstrom to several mum, a sheet of the mask can be employed in many times and thus it becomes unnecessary to form the mask for ion injection for each substrate as usual. The mask is formed by laminating films made of the same material and having different thickness or films of different kinds.
申请公布号 JPS56100413(A) 申请公布日期 1981.08.12
申请号 JP19800003863 申请日期 1980.01.16
申请人 MATSUSHITA ELECTRIC IND CO LTD 发明人 TSUJI KAZUHIKO;HIRAO TAKASHI;TAKAYANAGI SHIGETOSHI
分类号 H01L21/266;H01L21/265 主分类号 H01L21/266
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