| 摘要 |
PURPOSE:To eliminate the change of the composition of an electrode when an oxidized film is formed and thereby stabilize the property by nitrifying the surface of the gate electrode formed of high-melting metal silicide provided through the intermediary of a gate insulating film on the occasion that the semiconductor device of MIS structure is prepared. CONSTITUTION:On the periphery of a p type semiconductor substrate 11 is provided a thick filed oxidized film 12, to the active region 13 of the substrate surrounded by the film 12 is connected a thin gate oxidized film 12, and on the whole surface including the film 12 is formed an MoSi2 film 15 to be the gate electrode by vacuum evaporation or spattering or the like. Next, by applying nitriding processing for one hour in NH3 gas at the temperature of 1,000 deg.C, a thin MoSi2 nitride 15a is produced on the surface of the film 15, and the film 15a, 15 and 14 are formed into the electrode through patterning. Later, with this electrode and the film 12 being used as a mask, ions are injected, within the substrate 11 thus exposed are formed an n<+> type source region 16 and a drain region 17, heat treatment for about 30min is applied thereto in dried oxygen at 900 deg.C, and thereby an oxidized film 18 is produced on the whole surface except for the electrode 15. |
