发明名称 SEMICONDUCTOR MEMORY DEVICE
摘要 PURPOSE:To prevent the accumulation of errors of data read out in a rare case by readling all data out of memory cells within a definite time during refreshing operation, and by correcting and rewriting erroneous data in a memory if it is detected. CONSTITUTION:In refreshing operation, a refresh address generating circuit (composed of refresh counter 23 and refresh address register 24) generates cyclically a column address for selecting readout data bits and a chip selection address and, while reading all memory contents of memory part 21, detects 28 an error of the readout data; erroneous data is corrected 31 and the corrected data and a check bit are rewritten together in the address where the error occured. Therefore, even an error of data read out of an address read out in a rare case is corrected and the accumulation of errors is prevented.
申请公布号 JPS5698781(A) 申请公布日期 1981.08.08
申请号 JP19790173494 申请日期 1979.12.29
申请人 NIPPON ELECTRIC CO 发明人 SASAMOTO YOSHIFUMI
分类号 G06F12/16;G06F11/10;G11C11/401;G11C29/00;G11C29/42 主分类号 G06F12/16
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